کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5457308 | 1515552 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electric field modulation of the band structure in MoS2/WS2 van der waals heterostructure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electric field modulation of the band structure in MoS2/WS2 van der waals heterostructure Electric field modulation of the band structure in MoS2/WS2 van der waals heterostructure](/preview/png/5457308.png)
چکیده انگلیسی
Using density functional theory calculations, we investigate the bandstructure of MoS2/WS2 van der waals heterostructure by applying external electric field perpendicular to the layers. It is demonstrated that the MoS2/WS2 is a type-II heterostructure, and therefore the electrons and holes are spatially separated. The band gap of MoS2/WS2 heterostructure continuously decreases with increasing external electric field, eventually a transition from semiconductor to metal is observed. Applying external electric field along +z direction and âz directions has different effects on the band gap due to the intrinsic spontaneous polarization in MoS2/WS2 heterostructure. The calculated result indicates that the band inversion in MoS2/WS2 heterostructure can be induced by changing the strength of the external electric field. The external electric field can significantly tune the band offsets almost linearly and modify the band alignment between MoS2 and WS2. The present study would open a new avenue for application of such transition-metal dichalcogenides heterostructures in future nano- and optoelectronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 250, January 2017, Pages 9-13
Journal: Solid State Communications - Volume 250, January 2017, Pages 9-13
نویسندگان
Wei Li, Tianxing Wang, Xianqi Dai, Xiaolong Wang, Caiyun Zhai, Yaqiang Ma, Shanshan Chang, Yanan Tang,