کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5457337 1515551 2017 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electric field dependence of hybridized gap in InAs/GaSb quantum well system
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Electric field dependence of hybridized gap in InAs/GaSb quantum well system
چکیده انگلیسی
We demonstrate theoretically that exchange interaction induced by electron-hole scattering via Coulomb interaction can cause a hybridized gap in InAs/GaSb based type II and broken-gap quantum wells. The hybridized energy spectra are obtained analytically at the low temperature and long wave limits. An electric field depended hybridized gap about 4 meV opens at the anti-crossing points of the hybridized energy spectra, in accordance with experimental measurements. The hybridized gap varies linearly with the gate electric voltage due to the fact that the electric field can change the exchange self-energy by tuning the overlap of the wavefunctions and the Fermi energy. Our theoretical results can give a deep insight of the origin of the hybridized gap and provide a simple way to determine the value and the position of the hybridized gap in the presence of the gate electric voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 251, February 2017, Pages 1-4
نویسندگان
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