کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5457402 | 1515554 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Robust quantum oscillations with non-zero Berry phase in Bi2Te3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We performed angle dependent magnetoresistance study of a metallic single crystal sample of Bi2Te3. We find that the magnetoresistance is highly asymmetric in positive and negative magnetic fields for small angles between the magnetic field and the direction perpendicular to the plane of the sample. The magnetoresistance becomes symmetric as the angle approaches 90°. The quantum Shubnikov de-Haas oscillations are symmetric and show signatures of topological surface states with Dirac dispersion in the form of non-zero Berry phase. However, the angular dependence of these oscillations suggests a complex three dimensional Fermi surface as the source of these oscillations, which does not exactly conform with the six ellipsoidal model of the Fermi surface of Bi2Te3. We attribute the asymmetry in the magnetoresistance to a mixing of the Hall voltage in the longitudinal resistance due to the comparable magnitude of the Hall and longitudinal resistance in our samples. This provides a clue to understanding the asymmetric magnetoresistance often seen in this and similar materials. Moreover, the asymmetric nature evolves with exposure to atmosphere and thermal cycling, which we believe is either due to exposure to atmosphere or thermal cycling, or both affecting the carrier concentration and hence the Hall signal in these samples. However, the quantum oscillations seem to be robust against these factors which suggests that the two have different origins.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 248, December 2016, Pages 68-76
Journal: Solid State Communications - Volume 248, December 2016, Pages 68-76
نویسندگان
Sourabh Barua, K.P. Rajeev,