کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545823 1450556 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling
چکیده انگلیسی

This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1339–1342
نویسندگان
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