کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545910 | 871857 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new electrothermal average model of the diode–transistor switch
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In the paper a new electrothermal average model of the diode–transistor switch operating in any dc–dc converter is proposed. With the use of this model the non-isothermal characteristics of dc–dc converters in the steady-state can be obtained. The method of formulation of such a model and its structure are described in detail. The correctness of the elaborated model was verified by comparing the SPICE simulated characteristics of the buck and boost converters operating both in the continuous and discontinuous conducting mode, obtained by the electrothermal dc analysis with the proposed model and by the electrothermal transient analysis with the physical models of the diode and the transistor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issue 1, January 2008, Pages 51–58
Journal: Microelectronics Reliability - Volume 48, Issue 1, January 2008, Pages 51–58
نویسندگان
Krzysztof Górecki,