کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545941 | 871860 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bulk built in current sensors for single event transient detection in deep-submicron technologies
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
As device dimensions are scaled down, single event transients (SET) are increasingly affecting the reliability of integrated circuits. An SET is a transient voltage perturbation caused by an energetic particle strike at the semiconductor. This work studies the applicability of bulk built in current sensors (bulk-BICS) for SET detection in deep-submicron technologies. The bulk-BICS detects the transient current generated by the impact of an energetic particle at a sensitive circuit node. The efficiency and applicability of this approach to SET detection is demonstrated through device and circuit level simulations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issue 5, May 2008, Pages 710–715
Journal: Microelectronics Reliability - Volume 48, Issue 5, May 2008, Pages 710–715
نویسندگان
Gilson Wirth,