The mechanical stress resistance capability of stress buffer structures in analog devices

In this research, we showed that the different stress buffer configurations in the analog device will change the magnitude of the mechanical stress effect on the device surface, which will cause the variation in the output voltage characteristic of the device as well. And, the experimental results reveal that the different stress buffer configurations provide the difference of the mechanical stress resistance capability on the LDO (Low Drop Out) analog device. The stress buffer structure can reduce the stress effect to the LDO analog device effectively, i.e., the variation of the output voltage character of the LDO analog device will be larger if there is no stress buffer structure on the LDO analog device. Our results could be a reference for the design of an analog device and its packaging to improve the performance of the analog device.