کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545947 | 871860 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stress intensities at the triple junction of a multilevel thin film package
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Stress intensities of a singular near-tip field around the vertex of a triple junction wedge in multilevel thin film packages are calculated using the two-state M-integral. For this calculation the existence of a simple auxiliary field in the sense of the M-integral associated with every eigenfunction for the triple junction vertex is first verified numerically. The auxiliary field is then employed for superposition with the elastic field under consideration, and the associated two-state M-integral is computed via the domain integral technique. This enables us to extract the stress intensity of each singular eigenfunction for the triple junction vertex at three different junction angles, α = 45°, 90° and 135°.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issue 5, May 2008, Pages 749–756
Journal: Microelectronics Reliability - Volume 48, Issue 5, May 2008, Pages 749–756
نویسندگان
Insu Jeon, Ki-Ju Kang, Seyoung Im,