An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics

MOSFETs and MOSCs incorporating HfO2 gate dielectrics were fabricated. The IDS–VDS, IDS–VGS, gated-diode and C–V characteristics were investigated. The subthreshold swing and the interface trap density were obtained. The surface recombination velocity and the minority carrier lifetime in the field-induced depletion region measured from the gated diodes were about 2.73 × 103 cm/s and 1.63 × 10−6 s, respectively. The effective capture cross section of surface state was determined to be 1.6 × 10−15 cm2 using the gated-diode technique in comparison with the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxide was also made.