کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545989 1450559 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation
چکیده انگلیسی

This paper focuses on the detailed study of the unipolar recharging phenomenon of the nanocluster NVM cells based upon the electron emission from the nanodots and their subsequent neutralization. It is shown that electron emission from nanodots is a very fast and effective process with a time constant <5 ms, but the subsequent neutralization of the positive accumulated charge is strongly dependent on the excess of Si atoms stored in the nanodots.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 47, Issues 4–5, April–May 2007, Pages 626–630
نویسندگان
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