Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

Measurements of some barrier parameters – thickness, hole effective mass – in the Al/SiO2/Si system, are carried out on the Metal-Oxide-Semiconductor (MOS) tunnel emitter transistors. For the high-doping case, the effect of resonant carrier transport via discrete levels in a quantum well of the depletion layer is considered and used for thickness estimation. Degradation of an MOS emitter is paid attention to. Hot electron injection related phenomena in silicon, namely electron–hole pair generation and photon emission, are quantitatively studied.