Eyring acceleration model in thick nitride/oxide dielectrics

A kinetic model is developed, which can predict failure times in thick nitride/oxide dielectric stacks at elevated temperatures. It is shown that failure time depends on the applied bias stress and temperature and, in the general case, obeys a two-stress Arrhenius-type relationship known as an Eyring acceleration model:tf=B∗VSTRESS-MN∗expΔHkTwhere tf is the failure time before charge saturation condition occurs, k is the Boltzmann constant, T is the absolute temperature, ΔH is the activation energy, M and N are the voltage and time dependent parameters, respectively, VSTRESS is the externally applied voltage stress and B is a proportionality constant. Furthermore it is demonstrated that the obtained kinetic equation is physically related to the nitride conduction, described by Frenkel–Poole equation.