Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

A detailed study of the carrier trapping properties shown by the silicon/oxynitride/oxide gate layers in PowerVDMOS technologies is reported. A quantitative analysis of hole and electron trap densities versus the specific N2O based nitridation process, extracted from Fowler–Nordheim constant current stress kinetics, allows a deep understanding of the role played by those defects in the susceptibility of every nitrided layer.