Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique

The generation and recombination mechanisms are main physical parameters with which we can have a simple and detailed description of the residual surface defects under the gate oxide and in the silicon bulk. This work shows that we can have such a description by gate/substrate current transients in alternative to other important techniques for similar topics, as deep level transient spectroscopy or Zerbst method, all based on capacitance transient analysis. The experimental technique is very easy, nevertheless it introduces some theoretical complexities so that only by reasonable approximations we get a good agreement between theory and experimental data.