Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices

This work shows an experimental study on the reliability of PowerMOSFET devices used in satellitar application. The total irradiated dose (TID) tolerance degree of a gate oxide as a function of its thickness and growth process has been investigated. Different oxide thin films, with thickness ranging from 25 nm to 35 nm, integrated in 30 V and 100 V N-channel STM PowerMOSFET vehicles, have been examined. The gate threshold voltage has been used to evaluate the degradation, in comparison to a predictive model. The attention is stressed onto non-ideality factors involving the gate degradation.