کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546078 1450563 2006 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The negative bias temperature instability in MOS devices: A review
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
The negative bias temperature instability in MOS devices: A review
چکیده انگلیسی

Negative bias temperature instability (NBTI), in which interface traps and positive oxide charge are generated in metal–oxide–silicon (MOS) structures under negative gate bias, in particular at elevated temperature, has come to the forefront of critical reliability phenomena in advanced CMOS technology. The purpose of this review is to bring together much of the latest experimental information and recent developments in theoretical understanding of NBTI. The review includes comprehensive summaries of the basic phenomenology, including time- and frequency-dependent effects (relaxation), and process dependences; theory, including drift–diffusion models and microscopic models for interface states and fixed charge, and the role of nitrogen; and the practical implications for circuit performance and new gate-stack materials. Some open questions are highlighted.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issues 2–4, February–April 2006, Pages 270–286
نویسندگان
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