کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546082 1450563 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of hot carriers in offset gated polysilicon thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Effects of hot carriers in offset gated polysilicon thin-film transistors
چکیده انگلیسی
The effects of hot carriers on the characteristics of intrinsic offset gated n-channel polysilicon thin-film transistors (TFTs), with channel length L = 10 μm, have been studied in relation to the offset length ΔL. From the evolution of the transfer and output characteristics during stress, the degree of the device degradation is deduced. In devices with ΔL = 0.5 and 1 μm, the on-state current is substantially reduced, whereas the subthreshold region remains almost unaffected. In devices with ΔL = 2 μm, the transfer characteristics are shifted first positively after short stressing time and then negatively, the on-state current is still substantially reduced and well-defined kink is formed in the subthreshold region. The device degradation is found to become more pronounced as the gate offset length increases. A model explaining the post-stress performance of offset gated devices is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issues 2–4, February–April 2006, Pages 311-316
نویسندگان
, , , , ,