کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546094 1450563 2006 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermal analysis of bond layer influence on performance of an all-active vertically coupled, microring resonating laser
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Thermal analysis of bond layer influence on performance of an all-active vertically coupled, microring resonating laser
چکیده انگلیسی

The vertical coupling of active InP based ring resonators and passive feeding waveguides necessitates the use of a waferbonding technology in the fabrication process. The required bond material (BCB) has a low thermal conductivity and will strongly influence the operating temperature and thus the performance of the ring resonator through its insulating effect. A comprehensive thermal analysis of a proposed vertically coupled ring resonator of 50 μm outer radius is undertaken during the design phase to determine the thermal impact of: the design of the wafer bond, the design of the passivation layer and the optical power levels. Thermal abatement strategies for semiconductor lasers are presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issues 2–4, February–April 2006, Pages 421–431
نویسندگان
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