کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546115 1450563 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Report on 4H–SiC JTE Schottky diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Report on 4H–SiC JTE Schottky diodes
چکیده انگلیسی

4H–SiC Schottky diodes with and without Junction Terminate Extension (JTE) have been fabricated using Ni for contact and boron for p+ implant. Electrical characterization showed a rectifying behaviour in the on-state. In the reverse mode, the un-terminated Schottky diode demonstrated a breakdown voltage of approximately 200 V, while the JTE structure exhibited a significant improved breakdown performance, and the blocking voltage over 450 V. Optical microscope examination revealed the surface flashover failure located at the metal contact periphery for the un-terminated Schottky diode, while the JTE structure failed in the central area of the metal contact. Both the experimental and theoretical analyses confirmed the JTE structure enhancement on the reliability for SiC Schottky diode performance in reverse mode.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issues 2–4, February–April 2006, Pages 637–640
نویسندگان
, , , , , , , ,