کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546143 871872 2008 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues
چکیده انگلیسی

We have studied temperature variations on two submicrometric dissipative structures with two different techniques. On one hand, we have used a thermoreflectance imaging technique which is a well-known non contact optical method to evaluate temperature variations but whose spatial resolution is limited by diffraction. On the other hand, we have used a scanning thermal microscope (SThM) to study the thermal behaviour of these small dissipative structures. We present qualitative results obtained by both methods and we compare their advantages and drawbacks in terms of calibration and spatial resolution for thermal measurements on microelectronic devices. In particular, we show how the thermoreflectance coefficient can become an advantage to enhance the image contrast and favour the spatial resolution.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issue 2, February 2008, Pages 204–211
نویسندگان
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