کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
546192 | 1450561 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Designing in reliability in advanced CMOS technologies
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Assessment of design implications due to degradation of CMOS devices is increasingly required in the latest technologies. This paper presents selected topics relevant to realize an efficient design-in reliability methodology in the latest generation CMOS technologies. NBTI is discussed in terms of characterization using On-The-Fly (OTF) methodology. Extension of OTF method is discussed using bias patterns to gain insights into NBTI under analog operation. A reliability simulation methodology is discussed against requirements for optimization and integration within an existing design flow. The features of this methodology are illustrated using some simple design examples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issues 9–11, September–November 2006, Pages 1464-1471
Journal: Microelectronics Reliability - Volume 46, Issues 9–11, September–November 2006, Pages 1464-1471