کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546223 1450561 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of highly accelerated electromigration test
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Development of highly accelerated electromigration test
چکیده انگلیسی

A new methodology that combines the Finite Element Modeling (FEM), statistical methodology (Rank Limit method & Expectation and Maximization algorithm) and experiments to shorten electromigration (EM) testing time without changing the physical mechanism of the EM is developed. It is found that increasing testing temperature to 250 °C is able to shorten the average testing time by more than 80%. Verification using Transmission Electron Microscope (TEM) analysis shows that the physical mechanism is indeed remained unchanged.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issues 9–11, September–November 2006, Pages 1638-1642