The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics

The effect of Copper on TDDB failure in a structure incorporating a low-k interlevel dielectric was studied theoretically and experimentally. Interdigitated comb capacitor structures were prepared with and without Cu metallization and stressed at 4.0 to 6.6 MV/cm at 150C. The samples without Cu did not fail to over 1800 hours at 4 MV/cm whereas the samples with Cu exhibited a median time to failure (t50) of ∼45 minutes. At 6.6 MV/cm, the t50 was ∼1.8 hours for the Cu free samples. This experiment demonstrated the importance of Cu in the TDDB behaviour of low-k dielectrics, but also demonstrated that the presence of Cu was not a necessary condition for failure. The effect of Cu diffusion on TDDB behaviour was studied in the context of the “Impact Damage” model. Both field assisted ionic diffusion and diffusion of neutral Cu was considered. It is seen that the behaviour at low fields near use conditions may have little relationship to the predictions obtained from the results of typical TDDB testing.