کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
546282 | 871879 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Compound semiconductor activation energy in humidity
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Product reliability investigations typically include accelerated humidity testing. Originally, the “standard” test was a biased 85 °C/85% relative humidity (RH) lifetest for 1000 h. Recently, a substitute accelerated version of this test has been used. The accelerated version is called highly accelerated stress test (HAST). The HAST conditions are also biased, at 130 °C, 85%RH, and approximately 18 PSI overpressure. The duration of the HAST test is normally 96–100 h – to be equivalent to the 85/85 test. This study is intended to investigate thermal acceleration and show that equivalent HAST tests on compound semiconductors are more highly accelerated and could be conducted with much shorter durations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issue 8, August 2006, Pages 1238–1246
Journal: Microelectronics Reliability - Volume 46, Issue 8, August 2006, Pages 1238–1246
نویسندگان
William J. Roesch,