کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467168 | 1518618 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quadrupole lens alignment with improved STIM and secondary electron imaging for Proton Beam Writing
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Minimal proximity effect coupled with uniform energy deposition in thin polymer layers make Proton Beam Writing (PBW) an intuitive direct-write lithographic technique. Feature sizes matching the focused beam spot size have been fabricated in photoresists down to 19 nm. Reproducible sub-10 nm beam focusing will make PBW a promising contender for sub-10 nm lithography. In this paper, we present beam size characterization by imaging a PBW resolution standard using transmitted/scattered ions and secondary electrons. Using Scanning Transmission Ion Microscopy (STIM) spectra for 1 and 2 MeV H2+ beams, we experimentally measure the thickness of the resolution standard to be 0.9 ± 0.1 μm, applying two independent calibration methods, which match the original intended thickness during fabrication. Through bias optimization of a Micro-Channel Plate (MCP), we show a tuneable secondary electron detection per proton for imaging with a maximum of 75% e/p for a beam of 1 MeV H2+. Based on STIM mode beam size measurement, we discuss considerations for quadrupole system alignment in order to remove higher order translational and rotational misalignments critical to achieve sub-40 nm spot sizes. A spot size of 13 Ã 32 nm2 (STIM) was achieved using a newly developed interface, capable of autofocusing ion beams and performing PBW.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 404, 1 August 2017, Pages 74-80
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 404, 1 August 2017, Pages 74-80
نویسندگان
Sarfraz Qureshi, P. Santhana Raman, Alrik Stegmaier, Jeroen A. van Kan,