کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467213 | 1518614 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomistic simulation of ion irradiation of semiconductor heterostructures
ترجمه فارسی عنوان
شبیه سازی اتومیستی از اشعه یون های نانوساختار نیمه هادی
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کلمات کلیدی
نیمه هادی های ساختاری، مخلوط پرتو یونی، دینامیک مولکولی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 409, 15 October 2017, Pages 14-18
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 409, 15 October 2017, Pages 14-18
نویسندگان
C. Fridlund, J. Laakso, K. Nordlund, F. Djurabekova,