کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5467213 1518614 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomistic simulation of ion irradiation of semiconductor heterostructures
ترجمه فارسی عنوان
شبیه سازی اتومیستی از اشعه یون های نانوساختار نیمه هادی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
چکیده انگلیسی
Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 409, 15 October 2017, Pages 14-18
نویسندگان
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