MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network

• Examine RF impact ionization with different Lg using the same CMOS technology node.
• The extraction of channel resistance should be separated from the breakdown network.
• Z22 and S21 is influenced by the breakdown network at low frequency as Lg reduces.
• The power gain at breakdown is lower than the value at saturation due to breakdown.

The channel resistance from the triode to impact ionization region is determined accurately with the inductive breakdown network considered for different channel length metal–oxide–semiconductor field–effect transistors (MOSFETs). The radio frequency (RF) drain breakdown effect (DBE) and substrate current induced body effect (SCBE) of the MOSFETs in the impact ionization region are distinguished to reveal the channel length dependent channel resistance and breakdown network. The deviation between channel resistance with and without considering the inductive breakdown network increases with reducing channel length due to more significant RF DBE. The presented analysis results can be beneficial to the reliability investigation for RF performance of the MOSFETs in the breakdown region.

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