کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467583 | 1398939 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of nitrogen implantation on the electrical properties of amorphous IGZO
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The influence of nitrogen implantation on the electrical properties of amorphous IGZO The influence of nitrogen implantation on the electrical properties of amorphous IGZO](/preview/png/5467583.png)
چکیده انگلیسی
In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence can decrease the carrier concentration of a-IGZO by three orders to 1016Â cmâ3, which attributes to the reduction of oxygen defects. The addition of nitrogen atoms can result in the increase of Hall mobility to 9.93Â cm2/VÂ s with the subsequent decrease to 6.49Â cm2/VÂ s, which reflects the reduction of the average potential barrier height (Ï0) to be 22.0Â meV with subsequent increase to 74.8Â meV in the modified percolation model. The results indicate that nitrogen can serve as an effective p-type dopants and oxygen defect suppressors. N-implantation with an appropriate fluence can effectively improve the Hall mobility and reduce the carrier concentration simultaneously.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 596-599
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 596-599
نویسندگان
S.L. Zhan, M. Zhao, D.M. Zhuang, E.G. Fu, M.J. Cao, L. Guo, L.Q. Ouyang,