Prediction of the photoluminescence of In0.53Ga0.47As/InP irradiated by 1Â MeV electron

Minimizing the impact of radiation-induced degradation on light source and optoelectronic devices based on the In0.53Ga0.47As/InP (InGaAs/InP) plays an important role in their applications. The first objective of this work is to measure the photoluminescence (PL) intensity of InGAs/InP before and after electron radiation. Electron fluence (0-9 × 1014 electrons/cm2)-dependent PL of InGaAs/InP in the range of free- and bound-exciton emission is presented. The experimental results show that the PL intensity of InGaAs/InP is decreased with increasing fluence and more electron-induced defects occurred in the InGaAs/InP hetero-junction than in the InGaAs/InP quantum well. The wavelength dependence of the PL intensity was then fitted using the “Asym2Sig” equation as an asymmetric double sigmoidal function, and the coefficients obtained show reasonable agreement with the experimental data. The strongest bound-exaction line with a width (full width at half-maximum) exhibited a thermal activation energy of approximately 0.71 eV for the InGaAs/InP hetero-junction, while it was not observed of InGaAs/InP quantum well. Moreover, the influence of fluence on the PL intensity was explained with the mathematical method in this work, which enables the prediction of the PL intensity of InGaAs/InP through wavelength and fluence.