کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5467945 1518632 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films
چکیده انگلیسی
Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volumes 389–390, 15 December 2016, Pages 13-16
نویسندگان
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