Synthesis, characterization and field emission properties of SiC nanowires prepared by chemical vapor reaction

SiC nanowires were synthesized on graphite substrates by a simple and economical technique of chemical vapor reaction (CVR) without catalyst assistant. The morphology and microstructure of the SiC nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and Raman scattering spectrum. The field emission properties of the SiC nanowires were measured. Results showed that the synthesized nanowires were β-SiC nanowires with some defects and a thin SiO2 amorphous layer. The nanowires were generally several tens to hundreds micrometres in length and about 100 nm in diameter. The growth of SiC nanowires was controlled by vapor-solid (VS) mechanism. The electron emission turn-on field (Eto) of the SiC nanowires is only 2.7 V/μm, which is lower than that of the reported SiC nanowires.