کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5468056 | 1518928 | 2017 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancing rectification of Nb:SrTiO3/ZnO heterojunctions by magnetic field
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
(100)Nb:SrTiO3/(110)ZnO heterojunction were epitaxially grown by RF magnetron sputtering. A typical rectification characteristic was observed before and after applying a magnetic field, but the rectifying effect was significantly enhanced after applying a magnetic field. From high and low frequency capacitance-voltage measurement, the interface state density is found to increase from 3.8Â ÃÂ 1012 to 8.2Â ÃÂ 1012Â eVâ1Â cmâ2 after applying a magnetic field of 0.55Â TÂ at room temperature. Furthermore, both the rectification ratio and interface state density increase after applying a magnetic field at temperatures from 90 to 300Â K. The magnetic field enhanced rectifying effect can be understood by the increase of interface state density. This result is promising for magnetoelectric applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 142, August 2017, Pages 66-71
Journal: Vacuum - Volume 142, August 2017, Pages 66-71
نویسندگان
Ming Han, Yong Ren, Jiachen Li, Yonghai Chen, Weifeng Zhang, Caihong Jia,