کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5468194 1518929 2017 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Cuprous oxide (Cu2O) thin films prepared by reactive d.c. sputtering technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Cuprous oxide (Cu2O) thin films prepared by reactive d.c. sputtering technique
چکیده انگلیسی
Synthesis of cuprous oxide (Cu2O) by direct current (DC) reactive magnetron sputtering technique has been demonstrated. Ar:O2 gas ratios in the plasma and the substrate temperature were the decisive parameters for the formation of unblemished Cu2O polycrystalline films. The optimal deposition parameters are: Ar:O2 ∼90:10; Ts∼623 K and d.c. power ∼0.6 kV at 1.2 mA/cm2. Optical spectroscopy, photo luminescence, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman measurements were carried out to characterize the films. Predominant p-type conductivity in the Cu2O films was confirmed from Hall measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 141, July 2017, Pages 296-306
نویسندگان
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