کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5468207 1518925 2017 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
One-step phase transition and thermal stability improvement of Ge2Sb2Te5 films by erbium-doping
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
One-step phase transition and thermal stability improvement of Ge2Sb2Te5 films by erbium-doping
چکیده انگلیسی
The crystallization behavior of Er-doped Ge2Sb2Te5 phase-change materials is investigated systemically for phase change memory application. It is observed that Er dopants can serve as a center for suppression of face-centered-cubic to hexagonal phase transition of Ge2Sb2Te5 films, leading to a one-step crystallization process. The crystallization temperature, 10-year data retention ability and crystalline resistance of Ge2Sb2Te5 films can be significantly increased. Raman spectra suggest that GeTe component is mainly responsible for the phase transition in Er-doped Ge2Sb2Te5 films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 145, November 2017, Pages 258-261
نویسندگان
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