Enhanced performance of quantum dots light-emitting diodes: The case of Al2O3 electron blocking layer

Atomic layer deposition (ALD)-processed aluminum oxide (Al2O3) thin film is introduced as an electron blocking layer (EBL) for quantum dot light-emitting diodes (QLEDs). The optimized Al2O3-based QLED exhibits the external quantum efficiency (EQE) of 2.2% with a maximum brightness of 49,410 cd m−2. The key parameters including the current efficiency (CE), power efficiency (PE), and lifetime of Al2O3-based QLEDs are comparable to the common QLEDs, further demonstrating that Al2O3 is an effective EBL for QLEDs.