How high can the mobility of monolayer tungsten disulfide be?

Monolayer tungsten disulfide is a very promising two-dimensional material for future transistor technology. Monolayer tungsten disulfide, owing to the unique electronic properties of its atomically thin two-dimensional layered structure, can be made into a high-performance transistor device. In this paper, we focus on band-structure and carrier mobility calculations for monolayer tungsten disulfide. We use the tight-binding (TB) method and modified effective mass approximation (MEMA) to calculate the band-structure, density of states, velocity square, and other physical quantities of monolayer tungsten disulfide. Electron mobility using the Kubo-Greenwood formula is calculated based on the TB and MEMA band model, respectively. The phonon-limited electron mobility of monolayer can be reached to ∼700 cm2/Vs. Our results help to design the future nanoelectronic devices with monolayer WS2.