کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5468435 | 1518934 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
AlGaN surfaces etched by CF4 plasma with and without the assistance of near-ultraviolet irradiation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Al0.24Ga0.76N thin film surfaces were etched with CF4 plasma, with and without the assistance of near-ultraviolet (UV) irradiation. The near-UV source was a black light lamp, which emitted wavelengths of 300-400Â nm. The chemical compositions and morphologies of surfaces etched under the two plasma conditions were compared, to clarify the effect of near-UV irradiation on the properties of the AlGaN surface. Near-UV irradiation during CF4 plasma etching reduced the amounts of F atoms, AlFx fluorides, and GaFx fluorides incorporated into the surface, and enhanced the amount of CFx fluorocarbons. Near-UV irradiation did not influence the depth distribution of incorporated fluorine-related impurities, or the degree of nitrogen deficiency caused in the surface. These compositional changes in the surface occurred irrespective of the gas pressure. Near-UV irradiation caused a significant change in the morphology of surfaces etched at high gas pressure (13Â Pa), as the etching time was increased to 60 and 100Â min. Near-UV irradiation did not change the morphologies of surfaces etched at lower gas pressures (1.3 and 6.7Â Pa), irrespective of etching time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 136, February 2017, Pages 28-35
Journal: Vacuum - Volume 136, February 2017, Pages 28-35
نویسندگان
Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Takashi Mukai,