کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5468464 | 1518936 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of Hf content on structure and electric properties of PHT thin films with self-buffered layer by PLD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Three components of lead hafnate titanate (PbHfxTi1-xO3, PHT) thin films have been fabricated by pulsed laser deposition (PLD) on the Pt (111)/Ti/SiO2/Si (100) substrates. In order to reduce the mismatch between the thin films and substrates, low temperature self-buffered layer is adopted. The effects of Hf content on structure and electric properties of PHT thin films have been investigated. The PHT near the MPB (x = 0.48) shows the highest remnant polarization (2Pr = 93.23 μC/cm2) and capacitance, even if its leakage current is a little worse than others. It should be noticed that the PHT ferroelectric films have a good performance after 2.15 Ã 1010 fatigue reversals, which indicates that PHT films as a promising material can be applied in ferromagnetic random access memory (FRAM).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 134, December 2016, Pages 69-72
Journal: Vacuum - Volume 134, December 2016, Pages 69-72
نویسندگان
Junfeng Li, Jun Zhu, Zhipeng Wu, Wenbo Luo,