Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology

• Abreast side-by-side diode based ESD device with snapback response is first reported.
• The related SOI compatible process and physical mechanism underneath is exploited.
• The layout dependence of the proposed structure is investigated via experiment.
• The snapback characteristics can be easily adjusted by junction depth and layout.
• Device performance is empirically validated and it can withstand over 2 kV ESD attack.

An Electrostatic Discharge (ESD) device with snapback breakdown property based on two abreast PN junctions with different reverse breakdown voltages is proposed. The proposed device can be implemented with conventional epitaxial silicon substrate with traditional VDMOS process, such that it can be applied to protect the dielectric layer under the gate of the transistor. The ESD protection characteristics of the proposed device can be easily adjusted by controlling the junction formation condition. The performance of the proposed device is validated by experimental measurements, which have shown to be able to withstand >2 kV ESD protection voltage consistently. The layout dependence of the proposed structure is also investigated.