Subthreshold behavior models for short-channel junctionless tri-material cylindrical surrounding-gate MOSFET

• Junctionless tri-material cylindrical surrounding-gate (JLTMCSG) MOSFET is presented.
• Models for potential, electric field, and subthreshold current are developed.
• JLTMCSG can effectively suppress DIBL and improve carrier transport efficiency.
• Analytical models results agree well with the simulated results obtained from ISE.

A novel junctionless tri-material cylindrical surrounding-gate (JLTMCSG) MOSFET is presented in this paper. The subthreshold behavior of JLTMCSG MOSFET is investigated by developing physical based analytical models for channel electrostatic potential, horizontal electric field, and subthreshold current. It is revealed that JLTMCSG MOSFET can effectively suppress DIBL and simultaneously improve carrier transport efficiency. It is also found that subthreshold current for JLTMCSG MOSFET can be significantly reduced by adopting both a small oxide thickness and a thin silicon channel. The accuracy of analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE.