Reliability of the doping concentration in an ultra-thin body and buried oxide silicon on insulator (SOI) and comparison with a partially depleted SOI

• We measured low and high doping UTBB SOI nMOSFETs at room and elevated temperature.
• We compared HCS reliability of PDSOI and FDSOI.
• Low off-current leakage but high degradation with HCS and PBTI on high-doped UTBB SOI nMOS.
• Degradation is dependent on elevated temperature rather than increasing stress time.
• PDSOI induces a higher trap density than FDSOI under HCS.

This study compares the reliability of nMOSFETs with low- and high-doped ultra-thin body and buried oxide (UTBB) with fully depleted (FD) and partially depleted (PD) silicon on insulator (SOI). The high-doped devices display lower off-current leakage performance but more degradation in both hot-carrier stress (HCS) and positive bias temperature instability (PBTI) test at both room temperature and elevated temperature compared with the low-doped devices. The PBTI test indicates that the high-doped devices induce high tunneling leakage and that the degradation is highly associated with temperature. The degradation stabilizes with an increase in stress time. The thinner PD-SOI demonstrates low variation at the threshold voltage and low drive current under HCS. The FD-SOI has better drain leakage control than the PD-SOI.