کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
546987 | 871960 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, we propose a read SNM model which considers soft oxide breakdown (SBD). It makes use of a resistance for modeling the soft oxide breakdown which adds two terms to the original model expression for the read SNM. The accuracy of the model is verified by comparing its predictions with those of HSPICE simulations for 45, 32, and 22 nm technologies. The comparison reveals a very good accuracy for the model. The results also show that NBTI aggravates the effect of SBD on the read SNM. This suggests that the effect of NBTI and SBD should be studied concurrently as has been performed in our model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 12, December 2012, Pages 2948–2954
Journal: Microelectronics Reliability - Volume 52, Issue 12, December 2012, Pages 2948–2954
نویسندگان
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi,