کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
547017 | 871968 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Efficiently analyzing the impact of aging effects on large integrated circuits
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Time-dependent variations have not received a lot of attention in the past. However, they gain in importance with each now process generation. Our goal is an accurate analysis of the timing degradation of large integrated circuits caused by aging effects. We present an aging-analysis flow on gate level that considers the two dominant aging-effects, NBTI and HCI. Furthermore, an aging model on module-level is proposed to handle even larger circuits. This aging model is on average 30× faster than an analysis on gate level while providing the same accuracy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 8, August 2012, Pages 1546–1552
Journal: Microelectronics Reliability - Volume 52, Issue 8, August 2012, Pages 1546–1552
نویسندگان
Dominik Lorenz, Martin Barke, Ulf Schlichtmann,