Including spatial correlations of channel length and threshold voltage variation in circuit simulations

Some integrated circuit manufacturing processes produce variation which is strongly correlated between devices physically near each other but not correlated between devices which are widely separated. Devices separated by intermediate distances are partial correlated. In this paper we describe a method to characterize and model variation which shows this type of spatial correlations.

► Spatially correlated device variations within integrated circuits.
► Compact model Monte Carlo implementation.
► Variation represented as Sine function of position.
► Uses X–Y coordinate information from LVS.
► Amplitude, wavelength and phase are random variables.