کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
547131 | 871980 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Challenges and developments of copper wire bonding technology
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Copper wire bonding has been studied for more than two decades. While copper wire bonding has many advantages over gold wire bonding, many challenges have to be solved to meet its application requirements. This paper presents the measures to overcome Cu oxidation, the optimization of bonding parameters and the improvement in capillary design. The reliability mechanism of copper wire bonding is described from the standpoints of IMC growth, pad Al squeeze and the ability of wire looping. The challenges of copper wire bonding on low-k wafers and some solutions are also briefly introduced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 6, June 2012, Pages 1092–1098
Journal: Microelectronics Reliability - Volume 52, Issue 6, June 2012, Pages 1092–1098
نویسندگان
Peisheng Liu, Liangyu Tong, Jinlan Wang, Lei Shi, Hao Tang,