Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism

The impact of the source on single event transient (SET) is studied for the balanced two-transistor inverter by a novel simulation structure in a 90 nm twin-well bulk CMOS technology. Due to the significantly distinct mechanism of single event change collection in PMOS and NMOS, the source, which is beneficial to broadening P-hit SET pulse width (WSET) but reducing N-hit WSET, plays a different role in SET production. Based on these different source roles, different radiation hardened by design (RHBD) methods are proposed to reduce WSET for PMOS and NMOS, respectively. The simulation results show that the proposed RHBD methods can remarkably reduce WSET.