The influence of ferroelectric–electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors

The surface potential and subthreshold characteristics in negative capacitance (NC) double-gate ferroelectric field-effect transistor (FeFET) were investigated by considering the metal–ferroelectric interface layer. The derived results indicates that the negative capacitance regime which allows for amplified surface potential and steeper subthreshold characteristics were significantly affected by the interface layer. This imposes a severe limit to the step-up conversion capability and steeper subthreshold (<60 mV/dec) obtainable in the device. These results may provide some insight into the design and performance improvement for the low power dissipation FeFETs.

► We investigated the metal–ferroelectric interface layer effect of MFS-FETs.
► The voltage amplification and subthreshold characteristics were simulated and examined.
► The electrical characteristics deteriorate due to the existence of interface layer.
► We indicate device design rules take into account the interface effect.