کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547247 871991 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
To the understanding of the formation of the III–V based droplet epitxial nanorings
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
To the understanding of the formation of the III–V based droplet epitxial nanorings
چکیده انگلیسی

The paper deals with the kinetics of the droplet epitaxial GaAs quantum ring formation grown on AlGaAs (0 0 1) surface. The observation is, that the aspect ratio of these nano structures is depends not only on the technological parameters but on the size of the initial droplet. Under appropriate growth conditions, the depressions, in the middle of the rings are deeper than the surface level of the substrate. A large number of tests show, that the depressions in the middle of the small rings are often deeper than that of the larger ones. The number is larger, than just statistical fluctuation. An explanation for this phenomenon and its kinetics are given in the paper, based on the size dependence of the material properties, like for instance solubility. The plausible explanation assumes is that the probability of the crystal seed formation in the larger droplets is higher.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 2, February 2012, Pages 430–433
نویسندگان
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