کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547371 871995 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances
چکیده انگلیسی

An alternative explicit multi-exponential model is proposed to describe multiple, arbitrary ideality factor, conduction mechanisms in semiconductor junctions with parasitic series and shunt resistances. This Lambert function based model allows the terminal current to be expressed as an explicit analytical function of the applied terminal voltage, in contrast to the implicit-type conventional multi-exponential model. As a result this model inherently offers a higher computational efficiency than conventional models, making it better suited for repetitive simulation and parameter extraction applications. Its explicit nature also allows direct analytic differentiation and integration. The model’s applicability has been assessed by parameter extraction and subsequent playback using synthetic and experimental diode forward I–V characteristics.

A model with arbitrary ideality factor values whose explicit nature affords higher computational efficiency than conventional implicit model and is analytically differentiable and integrable.Figure optionsDownload as PowerPoint slideHighlights
► Explicit arbitrary ideality factor multi-exponential model for junction with series and shunt resistances.
► Current is modeled as an explicit function of applied voltage.
► Provides higher computational efficiency than conventional implicit model.
► Allows direct analytic differentiation and integration of the current.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 51, Issue 12, December 2011, Pages 2044–2048
نویسندگان
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