Reduction of ultrasonic pad stress and aluminum splash in copper ball bonding

Given the cost and performance advantages associated with Cu wire, it is being increasingly seen as a candidate to replace Au wire for making interconnections in first level microelectronics packaging. A Cu ball bonding process is optimized with reduced pad stress and splash, using a 25.4 μm diameter Cu wire. For ball bonds made with conventionally optimized bond force and ultrasonic settings, the shear strength is ≈140 MPa. The amount of splash extruding out of bonded ball interface is between 10 and 12 μm. It can be reduced to 3–7 μm if accepting a shear strength reduction to 50–70 MPa. For excessive ultrasonic settings, elliptical shaped Cu bonded balls are observed, with the minor axis of the ellipse in the ultrasonic direction and the major axis perpendicular to the ultrasonic direction. To quantify the direct effect of bond force and ultrasound settings on pad stress, test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic force signals are used. By using a lower value of bond force combined with a reduced ultrasound level, the pad stress can be reduced by 30% while achieving an average shear strength of at least 120 MPa. These process settings also aid in reducing the amount of splash by 4.3 μm.